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IXTH 50N30
IXTT 50N30
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
TO-247 Outline
g fs
V DS = 10 V; I D = 0.5 I D25 , pulse test
24
36
S
C iss
C oss
V GS = 0 V, V DS = 25 V, f = 1 MHz
4400
700
pF
pF
1
2
3
C rss
t d(on)
240
24
pF
ns
t r
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
33
ns
t d(off)
R G = 2 ? (External)
70
ns
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
t f
17
ns
Dim.
Millimeter
Inches
Q g(on)
Q gs
Q gd
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
165
30
80
nC
nC
nC
Min. Max.
A 4.7 5.3
A 1 2.2 2.54
A 2 2.2 2.6
b 1.0 1.4
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
R thJC
R thCK
(TO-247)
0.21
0.31
K/W
K/W
b 1 1.65 2.13
b 2 2.87 3.12
C .4 .8
D 20.80 21.46
.065 .084
.113 .123
.016 .031
.819 .845
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
.610 .640
0.205 0.225
.780 .800
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
L1 4.50
? P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
.177
.140 .144
0.232 0.252
.170 .216
I S
I SM
V SD
T rr
Q RM
V GS = 0 V
Repetitive
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
I F = 25A
-di/dt = 100 A/ μ s
V R = 100V
360
4.0
50
200
1.5
A
A
V
ns
μ C
S 6.15 BSC
TO-268 Outline
242 BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
of the following U.S. patents:
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
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